? semiconductor components industries, llc, 2015 april, 2015 ? rev. 4 1 publication order number: bc856bwt1/d bc856b, bc857b, bc858a general purpose transistors pnp silicon these transistors are designed for general purpose amplifier applications. they are housed in the sc?70/sot?323 which is designed for low power surface mount applications. features ? s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-emitter voltage bc856 bc857 bc858 v ceo ?65 ?45 ?30 v collector-base voltage bc856 bc857 bc858 v cbo ?80 ?50 ?30 v emitter?base voltage v ebo ?5.0 v collector current ? continuous i c ?100 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (note 1) t a = 25 c p d 150 mw thermal resistance, junction?to?ambient r ja 883 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?5 = 1.0 x 0.75 x 0.062 in. www. onsemi.com sc?70/sot?323 case 419 style 3 marking diagram 1 2 3 collector 3 1 base 2 emitter see detailed ordering and shipping information in the packag e dimensions section on page 5 of this data sheet. ordering information 1 xx m xx = specific device code m = date code* = pb?free package *date code orientation may vary depending up- on manufacturing location. (note: microdot may be in either location)
bc856b, bc857b, bc858a www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage bc856 (i c = ?10 ma) bc857 bc858 v (br)ceo ?65 ?45 ?30 ? ? ? ? ? ? v collector ?emitter breakdown voltage bc856 (i c = ?10 a, v eb = 0) bc857 bc858 v (br)ces ?80 ?50 ?30 ? ? ? ? ? ? v collector ?base breakdown voltage bc856 (i c = ?10 a) bc857 bc858 v (br)cbo ?80 ?50 ?30 ? ? ? ? ? ? v emitter ?base breakdown voltage bc856 (i e = ?1.0 a) bc857 bc858 v (br)ebo ?5.0 ?5.0 ?5.0 ? ? ? ? ? ? v collector cutoff current (v cb = ?30 v) collector cutoff current (v cb = ?30 v, t a = 150 c) i cbo ? ? ? ? ?15 ?4.0 na a on characteristics dc current gain bc856a, bc585a (i c = ?10 a, v ce = ?5.0 v) bc856b, bc857b, bc858b bc857c (i c = ?2.0 ma, v ce = ?5.0 v) bc856a, bc858a bc856b, bc857b, bc858b bc857c h fe ? ? ? 125 220 420 90 150 270 180 290 520 ? ? ? 250 475 800 ? collector ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v ce(sat) ? ? ? ? ?0.3 ?0.65 v base ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v be(sat) ? ? ?0.7 ?0.9 ? ? v base ?emitter on voltage (i c = ?2.0 ma, v ce = ?5.0 v) (i c = ?10 ma, v ce = ?5.0 v) v be(on) ?0.6 ? ? ? ?0.75 ?0.82 v small? signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ?0.2 ma, v ce = ?5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc856b, bc857b, bc858a www. onsemi.com 3 bc857/bc858 figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. ?saturation? and ?on? voltages i c , collector current (madc) -0.2 0.2 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current?gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c t a = 25 c 1.0
bc856b, bc857b, bc858a www. onsemi.com 4 bc856 figure 7. dc current gain i c , collector current (ma) figure 8. ?on? voltage i c , collector current (ma) -0.8 -1.0 -0.6 -0.2 -0.4 1.0 2.0 -0.1 -1.0 -10 -200 -0.2 0.2 0.5 -0.2 -1.0 -10 -200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = -5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. base?emitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = -5.0 v t a = 25 c 0 -0.5 -2.0 -5.0 -20 -50 -100 -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c vb for v be -2.0 -5.0 -20 -50 -100 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. current?gain ? bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0 -50 ma -200 ma
bc856b, bc857b, bc858a www. onsemi.com 5 figure 13. thermal response t, time (ms) 1.0 r(t), transient thermal 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 14. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c z jc (t) = r(t) r jc r jc = 83.3 c/w max z ja (t) = r(t) r ja r ja = 200 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc858 bc857 bc856 the safe operating area curves indicate i c ?v ce lim - its of the transistor that must be observed for reliable oper - ation. collector load lines for specific circuits must fal l below the limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curve s are valid for duty cycles to 10% provided t j(pk) 150 c . t j(pk) may be calculated from the data in figure 13. a t high case or ambient temperatures, thermal limitation s will reduce the power that can be handled to values les s than the limitations imposed by the secondary breakdown . ordering information device marking package shipping ? bc856bwt1g 3b sc?70/sot?323 (pb?free) 3,000 / tape & reel sbc856bwt1g* bc857bwt1g 3f sc?70/sot?323 (pb?free) 3,000 / tape & reel sbc857bwt1g* bc857cwt1g 3g sc?70/sot?323 (pb?free) 3,000 / tape & reel NSVBC857CWT1G* bc858awt1g 3j sc?70/sot?323 (pb?free) 3,000 / tape & reel bc858bwt1g 3k sc?70/sot?323 (pb?free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualifi ed and ppap capable.
bc856b, bc857b, bc858a www. onsemi.com 6 package dimensions sc?70 (sot?323) case 419?04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bc856bwt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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